Stress memorization film and oxide isolation in fins
US9419137B1 · kind B1 · utility
6Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Mar 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of straining fins of a FinFET device by using a stress memorization film and the resulting device are provided. Embodiments include providing a plurality of bulk Si fins, the plurality of bulk Si fins having a recessed oxide layer therebetween; forming a stress memorization layer over the plurality of bulk Si fins and the recessed oxide layer; annealing the stress memorization layer, the plurality of bulk Si fins, and the recessed oxide layer; and removing the stress memorization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.