Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US9425387B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction (MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with a metal oxide layer to promote perpendicular magnetic anisotropy (PMA) therein. A diffusion barrier is formed on a side of the metal oxide layer opposite the second interface to prevent non-magnetic metals in a hard mask or electrode from migrating to the second interface and degrading free layer PMA. A second diffusion barrier may be formed between a second electrode and a reference layer. The diffusion barrier may be a single layer of SiN, TiN, TaN, Mo, or CoFeX where X is Zr, P, B, or Ta, or is a multilayer such as CoFeX/Mo wherein CoFeX contacts the metal oxide layer and Mo adjoins a hard mask. As a result, coercivity is maintained or increased in the MTJ after annealing at 400° C. for 30 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.