Backside rapid thermal processing of patterned wafers
US9431278B2 · kind B2 · utility
2Cited by
19References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2008 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27D21/0014
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.