Deep trench with self-aligned sinker

US9431286B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Sameer Pendharkar · Allen, US
• Binghua Hu · Plano, US
• Abbas Ali · Plano, US
• Henry Litzmann Edwards · Garland, US
• John P. Erdeljac · Plano, US
• Britton Robbins · McKinney, US
• Jarvis Benjamin Jacobs · Sachse, US

Key dates

• Filing date: Nov 26, 2014
• Grant date: Aug 30, 2016
• Expiry date: Jan 2, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device with a buried layer has a deep trench structure abutting the buried layer and a self-aligned sinker along sidewalls of the deep trench structure. The semiconductor device may be formed by forming a portion of a deep trench down to the buried layer, and implanting dopants into a substrate of the semiconductor device along sidewalls of the deep trench, and subsequently forming a remainder of the deep trench extending below the buried layer. Alternatively, the semiconductor device may be formed by forming the deep trench to extend below the buried layer, and subsequently implanting dopants into the substrate of the semiconductor device along sidewalls of the deep trench.