Super-high density trench MOSFET
US9431530B2 · kind B2 · utility
3Cited by
92References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2010 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Oct 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.