Trench polysilicon diode
US9431550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Nov 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.