Semiconductor device and method for fabricating the same
US9443757B1 · kind B1 · utility
7Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.