Super junction trench power MOSFET device fabrication

US9443974B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Yang Gao · Hangzhou City, CN
• Kyle Terrill · Santa Clara, US
• Deva Pattanayak · Saratoga, US
• Kuo-In Chen · Los Altos, US
• The-Tu Chau · San Jose, US
• Sharon Shi · San Jose, US
• Qufei Chen · San Jose, US

Key dates

• Filing date: Aug 27, 2009
• Grant date: Sep 13, 2016
• Expiry date: Oct 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.