Switching film structure for magnetic random access memory (MRAM) cell
US9461094B2 · kind B2 · utility
11Cited by
3References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 17, 2014 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/73
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.