Metal segments as landing pads and local interconnects in an IC device
US9466604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2014 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jan 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for utilizing metal segments of an additional metal layer as landing pads for vias and also as local interconnects between contacts in an IC device and resulting devices are disclosed. Embodiments include forming source/drain and gate contacts connected to transistors on a substrate in an integrated circuit device, each contact having an upper surface with a first area; forming metal segments in a plane at the upper surface of the contacts, each metal segment being in contact with one or more of the contacts and having a second area greater than the first area; and forming one or more vias between one or more of the metal segments and one or more first segments of a first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.