Method of aligning substrate-scale mask with substrate
US9490154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jan 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the “overhang” of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.