Methods of forming nanowire devices with doped extension regions and the resulting devices
US9490340B2 · kind B2 · utility
7Cited by
10References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 18, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a nanowire device includes patterning a plurality of semiconductor material layers such that each layer has first and second exposed end surfaces. The method further includes forming doped extension regions in the first and second exposed end surfaces of the semiconductor material layers. The method further includes, after forming the doped extension regions, forming epi semiconductor material in source and drain regions of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.