Channel protection during fin fabrication

US9496371B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Russell H. Arndt · Fishkill, US
• Hong He · Schenectady, US
• Gauri Karve · Cohoes, US
• Fee Li Lie · Albany, US
• Muthumanickam Sankarapandian · Niskayuna, US

Key dates

• Filing date: Oct 7, 2015
• Grant date: Nov 15, 2016
• Expiry date: Oct 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3081
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for protecting channels during fin fabrication. Fins are formed on a substrate. A conformal liner layer (or layers) is applied on the fins. Active portions of a semiconductor device are patterned in the fins using a first organic planarizing material. The first organic planarizing material is stripped. The length of the fins is adjusted using a second organic planarizing material. The second organic planarizing material is stripped. The conformal liner layer(s) is stripped.