Memory cells and methods of forming memory cells
US9508931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.