Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
US9514933B2 · kind B2 · utility
2Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.