Lateral bipolar junction transistor having graded SiGe base
US9525027B2 · kind B2 · utility
11Cited by
10References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | May 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral bipolar junction transistor is fabricated using a semiconductor-on-insulator substrate. The transistor includes a germanium gradient within a doped silicon base region, there being an increasing germanium content in the direction of the collector region of the transistor. The use of a substrate including parallel silicon fins to fabricate lateral bipolar junction transistors facilitates the inclusion of both CMOS FinFET devices and lateral bipolar junction transistors having graded silicon germanium base regions on the same chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.