Method of forming a semiconductor structure
US9530646B2 · kind B2 · utility
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2References
18Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.