Method for fabricating a semiconductor device
US9530871B1 · kind B1 · utility
6Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2016 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Aug 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.