Forming fins of different semiconductor materials on the same substrate
US9536900B2 · kind B2 · utility
3Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, by etching a region of an SOI substrate so that only a portion of the original semiconductor is present above the insulator layer. After etching has occurred, a different semiconductor material is grown in the etched region, and fins are formed. An isolation layer is deposited to a height above that the base semiconductor of the etched region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.