Plasma activated conformal dielectric film deposition
US9570274B2 · kind B2 · utility
29Cited by
153References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3365
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.