Patent · US Active

Method of dicing a wafer and semiconductor chip

US9570352B2 · kind B2 · utility

2Cited by

1References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Brunnbauer · Lappersdorf, DE
Bernhard Drummer · Tegernheim, DE
Korbinian Kaspar · Regensburg, DE
Gunther Mackh · Dresden, DE

Key dates

Filing date	Dec 10, 2015
Grant date	Feb 14, 2017
Priority date	—
Expiry date	Dec 10, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/6834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, the separation regions being free from metal, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.