Local interconnect structure including non-eroded contact via trenches
US9570397B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/535
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A local interconnect structure includes a substrate having a dielectric layer and at least one semiconductor contact structure embedded in the dielectric layer. An electrically conductive material is deposited in a non-eroded contact trench that defines at least one electrically conducive contact via. The contact via extends from a first end that is flush with an upper surface of the dielectric layer to a second end that contacts the at one semiconductor contact structure. A local conductive material layer is formed in the dielectric layer and contacts the first end of the contact via. The non-eroded contact trench includes sharp upper corners formed at approximately ninety degrees with respect to the first end of the contact via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.