Magnetic tunnel junction (MTJ) device array

US9570509B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Vladimir Machkaoutsan · Leuven, BE
• Matthias Georg Gottwald · Leuven, BE
• Mustafa Badaroglu · Kessel-Lo, BE
• Jimmy Jianan Kan · San Diego, US
• Kangho Lee · Singapore, SG
• Yu Lu · San Diego, US
• Chando Park · San Diego, US

Key dates

• Filing date: Jan 29, 2015
• Grant date: Feb 14, 2017
• Expiry date: Jan 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.