Patent · US Active

Method of operating a reverse conducting IGBT

US9571087B2 · kind B2 · utility

0Cited by

6References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Frank Pfirsch · Birkenfeld, DE
Dorothea Werber · Munich, DE
Anton Mauder · Kolbermoor, DE
Carsten Schaeffer · Annenheim, AT

Key dates

Filing date	Dec 9, 2015
Grant date	Feb 14, 2017
Priority date	—
Expiry date	Dec 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an off-state in a forward biased mode. The semiconductor device includes at least one floating parasitic region disposed outside a cell region of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.