High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

US9576801B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Xia Li · San Diego, US
• Jeffrey Junhao Xu · San Diego, US
• Zhongze Wang · San Diego, US
• Bin Yang · San Diego, US
• Xiaonan Chen · Boise, US
• Yu Lu · San Diego, US

Key dates

• Filing date: Dec 1, 2014
• Grant date: Feb 21, 2017
• Expiry date: Dec 1, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for increased cell density and larger scale integration. A doped oxide layer, such as a silicon-doped hafnium oxide (HfO2) layer, is implemented as a ferroelectric dipole layer in a nonvolatile memory device.