Chemical mechanical polishing pad and method of making same

US9586305B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Bainian Qian · Newark, US
• Julia Kozhukh · Cambridge, US
• Teresa Brugarolas Brufau · Philadelphia, US
• David Michael Veneziale · Hatfield, US
• Yuhua Tong · Hockessin, US
• Diego Lugo · Newark, US
• Jeffrey B. Miller · Brookline, US
• George C. Jacob · Newark, US
• Marty W. DeGroot · Middletown, US
• Tony Quan Tran · Bear, US
• Marc R. Stack · Middletown, US
• Andrew Wank · Avondale, US
• Fengji Yeh · Wilmington, US

Key dates

• Filing date: Jun 26, 2015
• Grant date: Mar 7, 2017
• Expiry date: Jun 26, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/249953
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.