Resistive random access memory (RRAM) cell and method for forming the RRAM cell
US9595670B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A method includes patterning a layered structure comprising a monolithic stack including a bottom electrode surrounded by a dielectric material, a switching material, a barrier material, a dielectric hardmask, and a patterned photoresist formed above and adjacent to a portion of the dielectric hardmask. The patterning includes patterning the dielectric hardmask using a first etchant and employing the patterned photoresist as a mask, patterning the barrier material using a second etchant and employing a portion of the dielectric hardmask remaining after the patterning the dielectric hardmask as a mask, and patterning the switching material using ion milling or etching and employing the portion of the dielectric hardmask remaining after the patterning the barrier material as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.