Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
US9601350B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jan 30, 2012 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.