Method for forming a semiconductor device

US9613805B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Werner Schustereder · Villach, AT
• Holger Schulze · Villach, AT
• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Rudolf Berger · Munich, DE
• Thomas Gutt · Taufkirchen, DE

Key dates

• Filing date: Dec 11, 2015
• Grant date: Apr 4, 2017
• Expiry date: Dec 11, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/324
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device comprises forming an amorphous or polycrystalline semiconductor layer adjacently to at least one semiconductor doping region having a first conductivity type located in a semiconductor substrate. The method further comprises incorporating dopants into the amorphous or polycrystalline semiconductor layer during or after forming the amorphous or polycrystalline semiconductor layer. The method further comprises annealing the amorphous or polycrystalline semiconductor layer to transform at least a part of the amorphous or polycrystalline semiconductor layer into a substantially monocrystalline semiconductor layer and to form at least one doping region having the second conductivity type in the monocrystalline semiconductor layer, such that a p-n junction is formed between the at least one semiconductor doping region having the first conductivity type and the at least one doping region having the second conductivity type.