Vapor deposition of silicon-containing films using penta-substituted disilanes
US9633838B2 · kind B2 · utility
2Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Dec 28, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Dec 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.