Semiconductor device including a LDMOS transistor

US9634085B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE
• Matthias Zigldrum · Regensburg, DE
• Michaela Braun · Regensburg, DE
• Christian Eckl · Regensburg, DE

Key dates

• Filing date: Jun 24, 2016
• Grant date: Apr 25, 2017
• Expiry date: Jun 24, 2036

Classification

• Technology area (CPC —): General

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 Ohm·cm, a front surface and a rear surface, at least one LDMOS transistor in the semiconductor substrate, and a RESURF structure. The RESURF structure includes a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.