Semiconductor device with auxiliary structure including deep level dopants

US9647100B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Christian Jaeger · Munich, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Roman Baburske · Otterfing, DE
• Andre Rainer Stegner · Unterhaching, DE
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Oct 20, 2015
• Grant date: May 9, 2017
• Expiry date: Oct 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.