Method for fabricating semiconductor device
US9673053B2 · kind B2 · utility
1Cited by
14References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.