Method for processing a semiconductor substrate and a method for processing a semiconductor wafer

US9673096B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• Technische Universität Wien · AT

Inventors

• Joachim Hirschler · Villach, AT
• Michael Roesner · Villach, AT
• Markus Heinrici · Klagenfurt, AT
• Gudrun Stranzl · Eisenlohrsweg, AT
• Martin Mischitz · Wernberg, AT
• Martin Zgaga · Rosegg, AT

Key dates

• Filing date: Nov 14, 2014
• Grant date: Jun 6, 2017
• Expiry date: Nov 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/95
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.