Method for manufacturing a fin MOS transistor

US9673329B2 · kind B2 · utility

Assignees

• STMicroelectronics SA
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Yves Morand · Grenoble, FR
• Romain Wacquez · Grenoble, FR
• Laurent Grenouillet · Voiron, FR
• Yannick Le Tiec · Crolles, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: Dec 4, 2015
• Grant date: Jun 6, 2017
• Expiry date: Dec 4, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A fin MOS transistor is made from an SOI-type structure that includes a semiconductor layer on a silicon oxide layer coating a semiconductor support. A trench formed from the surface of the semiconductor layer delimits at least one fin in the semiconductor layer, that trench extending at least to an upper surface of the semiconductor support. Etched recesses in sides of a portion of the silicon oxide layer located under the fin are filled with a material selectively etchable over silicon oxide.