Integrated circuit having improved electromigration performance and method of forming same
US9679810B1 · kind B1 · utility
16Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2016 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Feb 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aspect of the disclosure is directed to a method of forming an interconnect for use in an integrated circuit. The method comprises: forming an opening in a dielectric layer on a substrate; filling the opening with a metal such that an overburden outside of the opening is created; subjecting the metal to a microwave energy dose such that atoms from the overburden migrate to within the opening; and planarizing the metal to a top surface of the opening to remove the overburden, thereby forming the interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.