Deposition of films comprising aluminum alloys with high aluminum content

US9683287B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Srinivas Gandikota · Santa Clara, US
• Xinliang Lu · Fremont, US
• Wei V. Tang · Santa Clara, US
• Jing Zhou · Huizhou, CN
• Seshadri Ganguli · Sunnyvale, US
• Jeffrey W. Anthis · San Jose, US
• Atif Noori · Saratoga, US
• Faruk Gungor · San Jose, US
• Dien-Yeh Wu · San Jose, US
• Mei Chang · San Jose, US
• Shih Chung Chen · Hsinchu, TW

Key dates

• Filing date: Oct 21, 2013
• Grant date: Jun 20, 2017
• Expiry date: Oct 21, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45534
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.