Low temperature encapsulation for magnetic tunnel junction

US9691972B1 · kind B1 · utility

Assignees

• International Business Machines Corporation · US
• TOKYO ELECTRON LIMITED · JP

Inventors

• Anthony J. Annunziata · Stamford, US
• Sebastian U. Engelmann · White Plains, US
• Eric A. Joseph · White Plains, US
• Gen P. Lauer · Mahopac, US
• Nathan P. Marchack · White Plains, US
• Deborah A. Neumayer · Danbury, US
• Masahiro Yamazaki · Tokyo, JP

Key dates

• Filing date: Dec 21, 2015
• Grant date: Jun 27, 2017
• Expiry date: Dec 21, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.