High temperature chuck for plasma processing systems
US9728437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2015 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Feb 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.