Magnetic tunnel junction (MTJ) device array
US9728718B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Dec 22, 2016 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.