Proxy wordline stress for read disturb detection
US9741444B2 · kind B2 · utility
4Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Apr 10, 2017 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Apr 10, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.