Lower dose rate ion implantation using a wider ion beam

US9748072B2 · kind B2 · utility

Assignee

• Advanced Ion Beam Technology, Inc. · TW

Inventors

• Zhimin Wan · Chandler, US
• Rekha Padmanabhan · Sunnyvale, US
• Xiao Bai · Beijing, CN
• Gary N. Cai · Grandview, US
• Ching-I Li · Tainan, TW
• Ger-Pin Lin · Tainan, TW
• Shao-Yu HU · Tainan, TW
• David E. Hoglund · Shorewood, US
• Robert Kaim · Brookline, US
• Kourosh Saadatmand · Merrimac, US

Key dates

• Filing date: Jun 23, 2014
• Grant date: Aug 29, 2017
• Expiry date: Feb 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/30477
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.