Method for transferring a layer from a single-crystal substrate
US9768057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | May 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.