Vacuum-integrated hardmask processes and apparatus

US9778561B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Jeffrey Marks · San Jose, US
• George Andrew Antonelli · Portland, US
• Richard A. Gottscho · Pleasanton, US
• Dennis M. Hausmann · Lake Oswego, US
• Adrien LaVoie · Newberg, US
• Thomas Knisley · Monroe, US
• Sirish Reddy · Hillsboro, US
• Bhadri N. Varadarajan · Beaverton, US
• Artur Kolics · Dublin, US

Key dates

• Filing date: Jan 30, 2015
• Grant date: Oct 3, 2017
• Expiry date: Aug 26, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67213
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.