Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching

US9799491B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Leonid Dorf · San Jose, US
• Kenneth S. Collins · San Jose, US
• Shahid Rauf · Pleasanton, US
• Kartik Ramaswamy · San Jose, US
• James D. Carducci · Sunnyvale, US
• Hamid Tavassoli · Cupertino, US
• Olga Regelman · Daly City, US
• Ying Zhang · Santa Clara, US

Key dates

• Filing date: May 4, 2016
• Grant date: Oct 24, 2017
• Expiry date: May 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.