Dry plasma etch method to pattern MRAM stack
US9806252B2 · kind B2 · utility
54Cited by
18References
20Claims
0Family size
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Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.