Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
US9816196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2013 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D21/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.