Methods, apparatus and system for a passthrough-based architecture
US9818651B2 · kind B2 · utility
14Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.