Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame
US9818677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment, a semiconductor component is provided that includes a leadframe having a device receiving area, one or more leadframe leads and at least one insulated metal substrate bonded to a first portion of the device receiving area. A first semiconductor device is mounted to a first insulated metal substrate, the first semiconductor device configured from a III-N semiconductor material. A first electrical interconnect is coupled between the first current carrying terminal of the first semiconductor device and a second portion of the die receiving area. In accordance with another embodiment, method includes providing a first semiconductor chip comprising a III-N semiconductor substrate material and a second semiconductor chip comprising a silicon based semiconductor substrate. The first semiconductor chip is mounted on a first substrate and the second semiconductor chip on a second substrate. The first semiconductor chip is electrically coupled to the second semiconductor chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.