Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices
US9825031B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Aug 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming first and second contact openings in a first dielectric layer. At least the first contact opening is at least partially lined with a liner layer. A first conductive feature is formed in the first contact opening and a second conductive feature is formed in the second contact opening. A portion of the liner layer adjacent a top surface of the first dielectric layer is removed to define a recess. A barrier layer is formed above the first dielectric layer and in the recess. The barrier layer has a first dielectric constant greater than a second dielectric constant of the first dielectric layer. A second dielectric layer is formed above the barrier layer. A third conductive feature is formed embedded in the second dielectric layer and contacting the second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.